MILPITAS, Calif.–(BUSINESS WIRE)–Jan 9, 2025–
Teledyne HiRel Semiconductors announces the availability of its Gallium Nitride (GaN) high-power RF switch, model TDSW84230EP. This switch offers high peak power and is designed to replace Positive-Intrinsic-Negative (PIN) diode-based RF Switches commonly used in RF front ends of many of today’s tactical and military communication radio systems. Developed using a wide-bandgap GaN High Electron Mobility Transistor (HEMT) process, this switch offers a very high breakdown voltage and high saturation current capabilities and is available in a 16-pin quad-flat no-lead (QFN) 3 mm x 3 mm x 0.8 mm plastic surface mount package and qualified to a military temperature range of –55⁰C to 125⁰C.
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Teledyne HiRel Semiconductors High-Power RF GaN Switch, TDSW84230 (Photo: Business Wire)
The TDSW84230EP SPDT GaN reflective switch leverages monolithic microwave integrated circuit (MMIC) design techniques and supports a high 20 watts CW power handling, operating from 30 MHz to 5 GHz. It has a low 0.2 dB insertion loss and a high 45 dB port isolation offering significant efficiency and board area savings compared to PIN diode architectures.