Scientists outline new processes for leveraging hafnia’s ferroelectric features with the aim of enhancing high-performance computing. Scientists and engineers have been pushing for the past decade to leverage an elusive ferroelectric material called hafnium oxide, or hafnia, to usher in the next generation of computing memory. A team of researchers including the University of Rochester’s Sobhit Singh published a Proceedings of the National Academy of Sciences study outlining progress toward making bulk ferroelectric and antiferroelectric hafnia available for use in a variety of applications.